Sub-10 nm electron beam lithography using cold development of poly„methylmethacrylate..
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چکیده
We investigate poly~methylmethacrylate! ~PMMA! development processing with cold developers ~4–10 °C! for its effect on resolution, resist residue, and pattern quality of sub-10 nm electron beam lithography ~EBL!. We find that low-temperature development results in higher EBL resolution and improved feature quality. PMMA trenches of 4–8 nm are obtained reproducibly at 30 kV using cold development. Fabrication of single-particle-width Au nanoparticle lines was performed by lift-off. We discuss key factors for formation of PMMA trenches at the sub-10 nm scale. © 2004 American Vacuum Society. @DOI: 10.1116/1.1763897#
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تاریخ انتشار 2004